Researchers engineered a strained germanium layer on silicon that allows charge to move faster than in any silicon-compatible material to date. This record mobility could lead to chips that run cooler, faster, and with dramatically lower energy consumption. The discovery also enhances the prospects for silicon-based quantum devices.
from All Top News -- ScienceDaily https://ift.tt/c98gqdT
from All Top News -- ScienceDaily https://ift.tt/c98gqdT
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